maximum rating: (t a =25c) symbol units drain-source voltage v ds 30 v gate-source voltage v gs 8.0 v continuous drain current i d 450 ma power dissipation p d 250 mw operating and storage junction temperature t j , t stg -65 to +150 c electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i gssf , i gssr v gs =8.0v, v ds =0 3.0 a i dss v ds =30v, v gs =0 1.0 a bv dss v gs =0, i d =100a 30 v v gs(th) v ds =v gs , i d =250a 0.5 1.0 v v sd v gs =0, i s =100ma 1.1 v r ds(on) v gs =4.5v, i d =430ma 1.1 r ds(on) v gs =2.5v, i d =200ma 2.0 r ds(on) v gs =1.8v, i d =100ma 3.3 q g(tot) v ds =10v, v gs =4.5v, i d =1.0a 0.880 nc q gs v ds =10v, v gs =4.5v, i d =1.0a 0.384 nc q gd v ds =10v, v gs =4.5v, i d =1.0a 0.128 nc g fs v ds =10v, i d =100ma 200 ms c rss v ds =25v, v gs =0, f=1.0mhz 10 pf c iss v ds =25v, v gs =0, f=1.0mhz 55 pf c oss v ds =25v, v gs =0, f=1.0mhz 15 pf CMUDM8004 surface mount p-channel enhancement-mode silicon mosfet description: the central semiconductor CMUDM8004 is an enhancement-mode p-channel field effect transistor, manufactured by the p-channel dmos process, designed for high speed pulsed amplifier and driver applications. this mosfet offers low r ds(on) and low theshold voltage. marking code: 84c features: ? esd protection up to 2kv ? low r ds(on) ? low threshold voltage ? logic level compatible ? small, sot-523 surface mount package ? complimentary n-channel mosfet: cmudm7004 applications: ? load/power switches ? power supply converter circuits ? battery powered portable devices ? devices are halogen free by design sot-523 case r1 (7-december 2010) www.centralsemi.com
CMUDM8004 surface mount p-channel enhancement-mode silicon mosfet pin configuration (bottom view) sot-523 case - mechanical outline lead code: 1) gate 2) source 3) drain marking code: 84c www.centralsemi.com r1 (7-december 2010)
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